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K7B801825A-QC900 PDF预览

K7B801825A-QC900

更新时间: 2024-09-17 19:52:39
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
21页 573K
描述
Cache SRAM, 512KX18, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

K7B801825A-QC900 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:9 nsJESD-30 代码:R-PQFP-G100
长度:20 mm内存密度:9437184 bit
内存集成电路类型:CACHE SRAM内存宽度:18
功能数量:1端子数量:100
字数:524288 words字数代码:512000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX18
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
宽度:14 mmBase Number Matches:1

K7B801825A-QC900 数据手册

 浏览型号K7B801825A-QC900的Datasheet PDF文件第2页浏览型号K7B801825A-QC900的Datasheet PDF文件第3页浏览型号K7B801825A-QC900的Datasheet PDF文件第4页浏览型号K7B801825A-QC900的Datasheet PDF文件第5页浏览型号K7B801825A-QC900的Datasheet PDF文件第6页浏览型号K7B801825A-QC900的Datasheet PDF文件第7页 
K7B803625A  
K7B801825A  
256Kx36 & 512Kx18 Synchronous SRAM  
Document Title  
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM  
Revision History  
Draft Date  
May. 24 . 2000  
July. 03. 2000  
Rev. No.  
History  
Remark  
0.0  
1.0  
Initial draft  
Preliminary  
Final  
1. Final spec Release.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
July 2000  
- 1 -  
Rev 1.0  

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