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K7B801825A-HC900 PDF预览

K7B801825A-HC900

更新时间: 2024-11-07 19:52:39
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
21页 573K
描述
Cache SRAM, 512KX18, 9ns, CMOS, PBGA119, BGA-119

K7B801825A-HC900 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:BGA,针数:119
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:9 nsJESD-30 代码:R-PBGA-B119
长度:22 mm内存密度:9437184 bit
内存集成电路类型:CACHE SRAM内存宽度:18
功能数量:1端子数量:119
字数:524288 words字数代码:512000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX18
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL认证状态:Not Qualified
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM宽度:14 mm
Base Number Matches:1

K7B801825A-HC900 数据手册

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K7B803625A  
K7B801825A  
256Kx36 & 512Kx18 Synchronous SRAM  
Document Title  
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM  
Revision History  
Draft Date  
May. 24 . 2000  
July. 03. 2000  
Rev. No.  
History  
Remark  
0.0  
1.0  
Initial draft  
Preliminary  
Final  
1. Final spec Release.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
July 2000  
- 1 -  
Rev 1.0  

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