Datasheet > K7A803608B-QI22

K7A803608B-QI22

更新时间： 2023-01-02 23:58:14

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器内存集成电路
页数	文件大小	规格书
18页	475K
描述
Cache SRAM, 256KX36, 2.8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

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K7A803608B-QI22 技术参数

K7A803608B

K7A803208B

K7A801808B

256Kx36/x32 & 512Kx18 Synchronous SRAM

Document Title

256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM

Revision History

Rev. No.

History

Draft Date

Remark

0.0

0.1

0.2

1.0

Initial draft

May. 18 . 2001 Preliminary

June. 26. 2001 Preliminary

1. Delete pass- through

1. Add x32 org part and industrial temperature part

Aug. 11. 2001

Nov. 16. 2001

Preliminary

Final

1. Final spec release

2. Change ISB2 form 50mA to 60mA

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

Nov 2001

Rev 1.0

12 3 4 5 6 7...18

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型号	品牌	获取价格	描述	数据表
K7A803609A	SAMSUNG	获取价格	256Kx36 & 512Kx18 Synchronous SRAM
K7A803609A-HC180	SAMSUNG	获取价格	Cache SRAM, 256KX36, 3.3ns, CMOS, PBGA119, BGA-119
K7A803609A-HC18T	SAMSUNG	获取价格	Standard SRAM, 256KX36, 3.3ns, CMOS, PBGA119
K7A803609A-HC20	SAMSUNG	获取价格	Cache SRAM, 256KX36, 3.1ns, CMOS, PBGA119, BGA-119
K7A803609A-HC200	SAMSUNG	获取价格	Cache SRAM, 256KX36, 3.1ns, CMOS, PBGA119, BGA-119
K7A803609A-HC20T	SAMSUNG	获取价格	Standard SRAM, 256KX36, 3.1ns, CMOS, PBGA119
K7A803609A-HC220	SAMSUNG	获取价格	Cache SRAM, 256KX36, 2.8ns, CMOS, PBGA119, BGA-119
K7A803609A-QC18	SAMSUNG	获取价格	Standard SRAM, 256KX36, 3.3ns, CMOS, PQFP100
K7A803609A-QC180	SAMSUNG	获取价格	Cache SRAM, 256KX36, 3.3ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A803609A-QC18T	SAMSUNG	获取价格	Standard SRAM, 256KX36, 3.3ns, CMOS, PQFP100