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K7A803609B-HI20 PDF预览

K7A803609B-HI20

更新时间: 2023-05-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
24页 611K
描述
Cache SRAM, 256KX36, 3.1ns, CMOS, PBGA119, BGA-119

K7A803609B-HI20 数据手册

 浏览型号K7A803609B-HI20的Datasheet PDF文件第2页浏览型号K7A803609B-HI20的Datasheet PDF文件第3页浏览型号K7A803609B-HI20的Datasheet PDF文件第4页浏览型号K7A803609B-HI20的Datasheet PDF文件第5页浏览型号K7A803609B-HI20的Datasheet PDF文件第6页浏览型号K7A803609B-HI20的Datasheet PDF文件第7页 
K7A803609B  
K7A803209B  
K7A801809B  
256Kx36/x32 & 512Kx18 Synchronous SRAM  
Document Title  
256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM  
Revision History  
Rev. No.  
History  
Draft Date  
Remark  
0.0  
0.1  
0.2  
0.3  
1.0  
Initial draft  
May. 18 . 2001 Preliminary  
June. 26. 2001 Preliminary  
1. Delete pass- through  
1. Add x32 org part and industrial temperature part  
1. change scan order(1) form 4T to 6T at 119BGA(x18)  
Aug. 11. 2001  
Aug. 28. 2001  
Nov. 16. 2001  
Preliminary  
Preliminary  
Final  
1. Final spec release  
2. Change ISB2 form 50mA to 60mA  
2.0  
Remove tCYC 225MHz(-22)  
April. 01. 2002 Final  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
April 2002  
Rev 2.0  

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256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM