Datasheet > K6X1008C2D-GQ700

K6X1008C2D-GQ700

更新时间： 2024-02-11 11:48:07

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
10页	122K
描述
Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32

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K6X1008C2D-GQ700 数据手册

K6X1008C2D Family

CMOS SRAM

TIMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH)

tRC

Address

tAA

tOH

Data Valid

Data Out

Previous Data Valid

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

tRC

Address

tOH

tAA

tCO1

CS1

tHZ(1,2)

CS2

tCO2

tOE

tOHZ

tOLZ

tLZ

High-Z

Data out

Data Valid

NOTES (READ CYCLE)

1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage

levels.

2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device

interconnection.

Revision 3.0

March 2005

1...3 4 567 8 9 10

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型号	品牌	描述	获取价格	数据表
K6X1008C2D-GQ70T	SAMSUNG	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32	获取价格
K6X1008C2D-PB55	SAMSUNG	128Kx8 bit Low Power CMOS Static RAM	获取价格
K6X1008C2D-PB550	SAMSUNG	Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 8 X 20 MM, LEAD FREE, TSOP1-32	获取价格
K6X1008C2D-PB55T	SAMSUNG	暂无描述	获取价格
K6X1008C2D-PB70	SAMSUNG	128Kx8 bit Low Power CMOS Static RAM	获取价格
K6X1008C2D-PB70T	SAMSUNG	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32	获取价格