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K6T4008C1B-GF700 PDF预览

K6T4008C1B-GF700

更新时间: 2024-11-29 14:43:03
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 170K
描述
Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32

K6T4008C1B-GF700 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:32
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.79
Is Samacsys:N最长访问时间:70 ns
JESD-30 代码:R-PDSO-G32长度:20.47 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:3 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:11.43 mm
Base Number Matches:1

K6T4008C1B-GF700 数据手册

 浏览型号K6T4008C1B-GF700的Datasheet PDF文件第2页浏览型号K6T4008C1B-GF700的Datasheet PDF文件第3页浏览型号K6T4008C1B-GF700的Datasheet PDF文件第4页浏览型号K6T4008C1B-GF700的Datasheet PDF文件第5页浏览型号K6T4008C1B-GF700的Datasheet PDF文件第6页浏览型号K6T4008C1B-GF700的Datasheet PDF文件第7页 
CMOS SRAM  
K6T4008C1B Family  
Document Title  
512Kx8 bit Low Power CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial Draft  
December 7, 1996  
Advance  
0.1  
Revise  
March 6, 1997  
Preliminary  
- Changed Operating current by reticle revision  
ICC at write : 35mA ® 45mA  
ICC1 at read/write : 15/35mA ® 10/45mA  
1.0  
Finalize  
October 9, 1997  
Final  
- Changed Operating current  
ICC1 at write : 45mA ® 40mA  
ICC2; 90mA ® 80mA  
- Change test load at 55ns : 100pF ® 50pF  
2.0  
3.0  
Revise  
- Change datasheet format  
February 17, 1998  
Final  
Revise  
September 8, 1998 Final  
- Industrial product speed bin change:70/100ns ® 55/70ns  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 3.0  
1
September 1998  

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