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K6T1008C2E-GQ70T PDF预览

K6T1008C2E-GQ70T

更新时间: 2023-08-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
10页 139K
描述
Standard SRAM, 128KX8, 70ns, CMOS, PDSO32

K6T1008C2E-GQ70T 数据手册

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K6T1008C2E Family  
CMOS SRAM  
Document Title  
128Kx8 bit Low Power CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
1.0  
Design target  
October 12, 1998  
August 30, 1999  
Preliminary  
Final  
Finalize  
- Improve tWP form 55ns to 50ns for 70ns product.  
- Remove 55ns speed bin from industrial product.  
1.01  
2.0  
Errata correction  
Revise  
December 1, 1999  
February 14, 2000  
March 3, 2000  
Final  
Final  
3.0  
Revise  
- Add 55ns parts to industrial products.  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 3.0  
March 2000  

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