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K6T1008U2C-GF85 PDF预览

K6T1008U2C-GF85

更新时间: 2024-01-22 10:01:12
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
11页 146K
描述
128K x8 bit Low Power and Low Voltage CMOS Static RAM

K6T1008U2C-GF85 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.82
最长访问时间:85 nsJESD-30 代码:R-PDSO-G32
长度:20.47 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:3 mm最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:11.43 mmBase Number Matches:1

K6T1008U2C-GF85 数据手册

 浏览型号K6T1008U2C-GF85的Datasheet PDF文件第2页浏览型号K6T1008U2C-GF85的Datasheet PDF文件第3页浏览型号K6T1008U2C-GF85的Datasheet PDF文件第4页浏览型号K6T1008U2C-GF85的Datasheet PDF文件第5页浏览型号K6T1008U2C-GF85的Datasheet PDF文件第6页浏览型号K6T1008U2C-GF85的Datasheet PDF文件第7页 
K6T1008V2C, K6T1008U2C Family  
CMOS SRAM  
Document Title  
128K x8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
1.0  
Initial draft  
July 3, 1996  
Preliminary  
Finalize  
December 16, 1996  
Final  
- Increased ISB, IDR  
Commercial part = 10mA  
Industrial part = 20mA  
2.0  
Revise  
November 25, 1997  
Final  
- Change speed bin  
KM68V1000C Family: 70/85ns ® 70/100ns  
KM68U1000C Family: 70/100ns ® 85/100ns  
- Improved operating current: 40mA ® 35mA  
- Improved power dissipation  
PD: 0.7W ® 1.0W  
- Improved standby current  
Extended/Industrial: 20 ® 10mA  
- VIL: 0.4V ® 0.6V  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 2.0  
November 1997  
1

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