Datasheet > K6T1008U2C-B

K6T1008U2C-B

更新时间： 2022-11-11 21:24:53

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
11页	146K
描述
128K x8 bit Low Power and Low Voltage CMOS Static RAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K6T1008U2C-B 数据手册

K6T1008V2C, K6T1008U2C Family

CMOS SRAM

Document Title

128K x8 bit Low Power and Low Voltage CMOS Static RAM

Revision History

Revision No. History

Draft Data

Remark

0.0

1.0

Initial draft

July 3, 1996

Preliminary

Finalize

December 16, 1996

Final

- Increased ISB, IDR

Commercial part = 10mA

Industrial part = 20mA

2.0

Revise

November 25, 1997

Final

- Change speed bin

KM68V1000C Family: 70/85ns ® 70/100ns

KM68U1000C Family: 70/100ns ® 85/100ns

- Improved operating current: 40mA ® 35mA

- Improved power dissipation

PD: 0.7W ® 1.0W

- Improved standby current

Extended/Industrial: 20 ® 10mA

- VIL: 0.4V ® 0.6V

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 2.0

November 1997

12 3 4 5 6 7...11

中文翻译

下载PDF

与K6T1008U2C-B相关器件

型号	品牌	描述	获取价格	数据表
K6T1008U2C-D	SAMSUNG	128K x8 bit Low Power and Low Voltage CMOS Static RAM	获取价格
K6T1008U2C-F	SAMSUNG	128K x8 bit Low Power and Low Voltage CMOS Static RAM	获取价格
K6T1008U2C-GB10	SAMSUNG	128K x8 bit Low Power and Low Voltage CMOS Static RAM	获取价格
K6T1008U2C-GB85	SAMSUNG	128K x8 bit Low Power and Low Voltage CMOS Static RAM	获取价格
K6T1008U2C-GD10	SAMSUNG	128K x8 bit Low Power and Low Voltage CMOS Static RAM	获取价格
K6T1008U2C-GD85	SAMSUNG	128K x8 bit Low Power and Low Voltage CMOS Static RAM	获取价格