是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | TSOP, TSOP44,.46,32 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | Is Samacsys: | N |
最长访问时间: | 12 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-G44 | JESD-609代码: | e0 |
内存密度: | 1048576 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 16 | 端子数量: | 44 |
字数: | 65536 words | 字数代码: | 64000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 64KX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP | 封装等效代码: | TSOP44,.46,32 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 3.3 V | 认证状态: | Not Qualified |
最大待机电流: | 0.0003 A | 最小待机电流: | 2 V |
子类别: | SRAMs | 最大压摆率: | 0.095 mA |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 0.8 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K6R1016V1C-TP15 | SAMSUNG |
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Standard SRAM, 64KX16, 15ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | |
K6R1016V1C-TP150 | SAMSUNG |
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Standard SRAM, 64KX16, 15ns, CMOS, PDSO44 | |
K6R1016V1C-TP20T | SAMSUNG |
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Standard SRAM, 64KX16, 20ns, CMOS, PDSO44 | |
K6R1016V1D | SAMSUNG |
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64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industria | |
K6R1016V1D-EC08 | SAMSUNG |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | |
K6R1016V1D-EC08/10 | SAMSUNG |
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64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industria | |
K6R1016V1D-EC080 | SAMSUNG |
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Standard SRAM, 64KX16, 8ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 | |
K6R1016V1D-EC10 | SAMSUNG |
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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | |
K6R1016V1D-EC100 | SAMSUNG |
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Standard SRAM, 64KX16, 10ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 | |
K6R1016V1D-EI08 | SAMSUNG |
获取价格 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |