Datasheet > K6R1016V1D-EC080

K6R1016V1D-EC080

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
11页	302K
描述
Standard SRAM, 64KX16, 8ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48

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K6R1016V1D-EC080 数据手册

for AT&T

CMOS SRAM

K6R1016V1D

Document Title

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)

Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev.No.

History

Draft Data

Remark

Rev. 0.0

Rev. 0.1

Rev. 0.2

Initial document.

Speed bin modify

Current modify

May. 11. 2001

June. 18. 2001

September. 9. 2001

Preliminary

Rev. 1.0

1. Delete 12ns speed bin.

2. Change Icc for Industrial mode.

Item

December. 18. 2001

Final

100mA

85mA

Current

90mA

75mA

8ns

ICC(Industrial)

10ns

Rev. 2.0

Rev. 3.0

Rev. 4.0

1. Add tBA,tBLZ,tBHZ,tBW AC parematers.

1. Correct read cycle timing diagram(2).

1. Add the Lead Free Package type.

February. 14. 2002

June. 19. 2002

July. 26, 2004

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev. 4.0

July 2004

- 1 -

12 3 4 5 6 7...11

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与K6R1016V1D-EC080相关器件

型号	品牌	获取价格	描述	数据表
K6R1016V1D-EC10	SAMSUNG	获取价格	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016V1D-EC100	SAMSUNG	获取价格	Standard SRAM, 64KX16, 10ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48
K6R1016V1D-EI08	SAMSUNG	获取价格	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016V1D-EI08/10	SAMSUNG	获取价格	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industria
K6R1016V1D-EI080	SAMSUNG	获取价格	Standard SRAM, 64KX16, 8ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48
K6R1016V1D-EI10	SAMSUNG	获取价格	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016V1D-EI100	SAMSUNG	获取价格	Standard SRAM, 64KX16, 10ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48
K6R1016V1D-FI12	SAMSUNG	获取价格	Standard SRAM, 64KX16, 12ns, CMOS, PBGA48
K6R1016V1D-FI12T	SAMSUNG	获取价格	Standard SRAM, 64KX16, 12ns, CMOS, PBGA48
K6R1016V1D-JC08	SAMSUNG	获取价格	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).