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K6R1016V1D PDF预览

K6R1016V1D

更新时间: 2024-02-23 01:35:26
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三星 - SAMSUNG /
页数 文件大小 规格书
11页 261K
描述
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

K6R1016V1D 数据手册

 浏览型号K6R1016V1D的Datasheet PDF文件第2页浏览型号K6R1016V1D的Datasheet PDF文件第3页浏览型号K6R1016V1D的Datasheet PDF文件第4页浏览型号K6R1016V1D的Datasheet PDF文件第5页浏览型号K6R1016V1D的Datasheet PDF文件第6页浏览型号K6R1016V1D的Datasheet PDF文件第7页 
for AT&T  
CMOS SRAM  
K6R1016V1D  
Document Title  
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
Rev.No.  
History  
Draft Data  
Remark  
Rev. 0.0  
Rev. 0.1  
Rev. 0.2  
Initial document.  
Speed bin modify  
Current modify  
May. 11. 2001  
June. 18. 2001  
September. 9. 2001  
Preliminary  
Preliminary  
Preliminary  
Rev. 1.0  
1. Delete 12ns speed bin.  
December. 18. 2001  
Final  
2. Change Icc for Industrial mode.  
Item  
Previous  
100mA  
85mA  
Current  
90mA  
75mA  
8ns  
ICC(Industrial)  
10ns  
Rev. 2.0  
Rev. 3.0  
1. Add tBA,tBLZ,tBHZ,tBW AC parematers.  
1. Correct read cycle timing diagram(2).  
February. 14. 2002  
June. 19. 2002  
Final  
Final  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,  
please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Revision 3.0  
June 2002  
- 1 -  

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