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K6R1016C1A-JI20 PDF预览

K6R1016C1A-JI20

更新时间: 2023-03-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
9页 197K
描述
Standard SRAM, 64KX16, 20ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44

K6R1016C1A-JI20 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SOJ, SOJ44,.44Reach Compliance Code:compliant
风险等级:5.88最长访问时间:20 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J44
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16端子数量:44
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ44,.44
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified最大待机电流:0.008 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.18 mA标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

K6R1016C1A-JI20 数据手册

 浏览型号K6R1016C1A-JI20的Datasheet PDF文件第2页浏览型号K6R1016C1A-JI20的Datasheet PDF文件第3页浏览型号K6R1016C1A-JI20的Datasheet PDF文件第4页浏览型号K6R1016C1A-JI20的Datasheet PDF文件第5页浏览型号K6R1016C1A-JI20的Datasheet PDF文件第6页浏览型号K6R1016C1A-JI20的Datasheet PDF文件第7页 
PRELIMINARY  
K6R1016C1A-C, K6R1016C1A-I  
CMOS SRAM  
Document Title  
64Kx16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out.  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
Rev. No.  
History  
Draft Data  
Remark  
Preliminary  
Final  
Rev. 0.0  
Rev. 1.0  
Initial release with Preliminary.  
Apr. 22th, 1995  
Feb. 29th, 1996  
Release to final Data Sheet.  
1.1. Delete Preliminary.  
Rev. 2.0  
Rev. 3.0  
Update D.C parameters.  
2.1. Update D.C parameters.  
Jul. 16th, 1996  
Final  
Previous spec.  
Updated spec.  
(12/15/17/20ns part)  
190/185/185/180mA  
Items  
(12/15/17/20ns part)  
220/210/200/190mA  
30mA  
Icc  
Isb  
25mA  
8mA  
Isb1  
10mA  
Add Industrial Temperature Range parts.  
Jun. 2nd, 1997  
Final  
3.1. Add Industrial Temperature Range parts with the same parame-  
ters as Commercial Temperature Range parts.  
3.1.1. Add KM6R1016C1A parts for Industrial Temperature  
Range.  
3.1.2. Add ordering information.  
3.1.3. Add the condition for operating at Industrial Temp. Range.  
3.2. Add the test condition for VOH1 with Vcc=5V±5% at 25°C.  
3.3. Add timing diagram to define tWP1 as ²(Timing Wave Form of  
Write Cycle(OE=Low fixed)².  
Rev. 4.0  
Feb. 25th, 1998  
Final  
4.1. Delete 17ns Part.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 4.0  
February 1998  
- 1 -  

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