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K6R1016C1C-FI12 PDF预览

K6R1016C1C-FI12

更新时间: 2024-11-02 08:20:27
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
11页 190K
描述
Standard SRAM, 64KX16, 12ns, CMOS, PBGA48, 0.75 MM PITCH, FBGA-48

K6R1016C1C-FI12 数据手册

 浏览型号K6R1016C1C-FI12的Datasheet PDF文件第2页浏览型号K6R1016C1C-FI12的Datasheet PDF文件第3页浏览型号K6R1016C1C-FI12的Datasheet PDF文件第4页浏览型号K6R1016C1C-FI12的Datasheet PDF文件第5页浏览型号K6R1016C1C-FI12的Datasheet PDF文件第6页浏览型号K6R1016C1C-FI12的Datasheet PDF文件第7页 
CMOS SRAM  
K6R1016C1C-C/C-L, K6R1016C1C-I/C-P  
Document Title  
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
Rev.No.  
Rev. 0.0  
Rev. 1.0  
History  
Draft Data  
Remark  
Initial release with preliminary.  
Aug. 5. 1998  
Sep. 7. 1998  
Preliminary  
Preliminary  
Relax DC characteristics.  
Item  
Previous  
90mA  
88mA  
Changed  
95mA  
93mA  
ICC  
12ns  
15ns  
20ns  
85mA  
90mA  
Rev. 2.0  
Rev. 2.1  
Add 48-fine pitch BGA.  
Changed device part name for FP-BGA.  
Sep. 17. 1998  
Nov. 5. 1998  
Preliminary  
Final  
Item  
Previous  
Changed  
F
Symbol  
Z
ex) K6R1016C1C-Z -> K6R1016C1C-F  
Rev. 2.2  
Changed device ball name for FP-BGA.  
Previous  
Dec. 10. 1998  
Final  
Changed  
I/O1 ~ I/O8  
I/O9 ~ I/O16  
I/O9 ~ I/O16  
I/O1 ~ I/O8  
Rev. 3.0  
Rev. 3.1  
Rev. 4.0  
Added Data Retention Characteristics.  
Add 10ns part.  
Mar. 3. 1999  
Mar. 3. 2000  
Sep.24. 2001  
Final  
Final  
Final  
Delete 20ns speed bin  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,  
please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Revision 4.0  
September 2001  
- 1 -  

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