Datasheet > K6R1016C1C-FI20

K6R1016C1C-FI20

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
11页	269K
描述
Standard SRAM, 64KX16, 20ns, CMOS, PBGA48, 0.75 MM PITCH, FBGA-48

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K6R1016C1C-FI20 数据手册

CMOS SRAM

K6R1016C1C-C/C-L, K6R1016C1C-I/C-P

Document Title

64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev.No.

Rev. 0.0

Rev. 1.0

History

Remark

Draft Data

Aug. 5. 1998

Sep. 7. 1998

Initial release with preliminary.

Preliminary

Relax DC characteristics.

Item

90mA

88mA

Changed

95mA

93mA

ICC

12ns

15ns

20ns

85mA

90mA

Rev. 2.0

Rev. 2.1

Add 48-fine pitch BGA.

Changed device part name for FP-BGA.

Sep. 17. 1998

Nov. 5. 1998

Preliminary

Final

Item

Changed

Symbol

ex) K6R1016C1C-Z -> K6R1016C1C-F

Rev. 2.2

Changed device ball name for FP-BGA.

Dec. 10. 1998

Final

Changed

I/O1 ~ I/O8

I/O9 ~ I/O16

I/O1 ~ I/O8

Rev. 3.0

Rev. 3.1

Added Data Retention Characteristics.

Add 10ns part.

Mar. 3. 1999

Mar. 3. 2000

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Revision 3.1

March 2000

- 1 -

12 3 4 5 6 7...11

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