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K6R1008V1B-TP12T PDF预览

K6R1008V1B-TP12T

更新时间: 2023-05-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
9页 184K
描述
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32

K6R1008V1B-TP12T 数据手册

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Preliminary  
PRELIMINARY  
CMOS SRAM  
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P  
Document Title  
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out.  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
RevNo.  
Rev. 0.0  
Rev.1.0  
History  
Draft Data  
Remark  
Initial release with Design Target.  
Apr. 1st, 1997  
Jun. 1st, 1997  
Design Target  
Preliminary  
Release to Preliminary Data Sheet.  
1.1. Replace Design Target to Preliminary.  
Rev.2.0  
Release to Final Data Sheet.  
Feb. 25th, 1998  
Final  
2.1. Delete Preliminary.  
2.2. Delete 32-SOJ-300 package.  
2.3. Add Capacitive load of the test environment in A.C test load.  
2.4. Change D.C characteristics.  
Previous spec.  
(8/10/12ns part)  
160/150/140mA  
30mA  
Changed spec.  
Items  
(8/10/12ns part)  
160/155/150mA  
50mA  
ICC  
ISB  
Rev. 2.1  
Aug. 4th, 1998  
Final  
Change Standby and Data Retention Current for L-ver.  
Items  
ISB1  
Previous spec.  
Changed spec.  
0.7mA  
0.5mA  
IDR at 3.0V  
IDR at 2.0V  
0.4mA  
0.3mA  
0.5mA  
0.4mA  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 2.1  
August 1998  
- 1 -  

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