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K6R1008V1C-JC12 PDF预览

K6R1008V1C-JC12

更新时间: 2024-01-12 15:43:50
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 132K
描述
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

K6R1008V1C-JC12 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SOJ, SOJ32,.44Reach Compliance Code:unknown
风险等级:5.92最长访问时间:12 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J32
JESD-609代码:e0内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ32,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
电源:3.3 V认证状态:Not Qualified
最大待机电流:0.005 A最小待机电流:3 V
子类别:SRAMs最大压摆率:0.075 mA
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

K6R1008V1C-JC12 数据手册

 浏览型号K6R1008V1C-JC12的Datasheet PDF文件第2页浏览型号K6R1008V1C-JC12的Datasheet PDF文件第3页浏览型号K6R1008V1C-JC12的Datasheet PDF文件第4页浏览型号K6R1008V1C-JC12的Datasheet PDF文件第5页浏览型号K6R1008V1C-JC12的Datasheet PDF文件第6页浏览型号K6R1008V1C-JC12的Datasheet PDF文件第7页 
PRELIMINARY  
P
CMOS SRAM  
K6R1008V1C-C/C-L, K6R1008V1C-I/C-P  
Document Title  
128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
Rev.No.  
Rev. 0.0  
Rev. 1.0  
History  
Draft Data  
Aug. 5. 1998  
Sep. 7. 1998  
Remark  
Initial release with Preliminary.  
Preliminary  
Preliminary  
Relax DC characteristics.  
Item  
Previous  
70mA  
68mA  
Changed  
75mA  
73mA  
ICC  
12ns  
15ns  
20ns  
65mA  
70mA  
Rev. 2.0  
Release to Final Data Sheet.  
2.1. Delete Preliminary.  
Mar. 3. 1999  
Final  
2.2. Changed Standby Current.  
Item  
Previous  
0.3mA  
Changed  
0.5mA  
Standby Current(Isb1)  
2.3. Added Data Retention Characteristics.  
Rev. 3.0  
Rev. 3.1  
Add 10ns part.  
Apr. 24. 2000  
Oct. 2. 2000  
Final  
Final  
VIH/VIL Change  
Previous  
Changed  
Item  
Min  
2.0  
-0.5  
Max  
VCC+0.5  
0.8  
Min  
2.0  
-0.3  
Max  
VCC+0.3  
0.8  
VIH  
VIL  
Rev. 4.0  
Sep. 24. 2001  
Final  
Delete 20ns speed bin  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Revision 4.0  
September 2001  
- 1 -  

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