Datasheet > K6R1008V1C-JC15T

K6R1008V1C-JC15T

更新时间： 2023-01-02 20:04:04

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
9页	183K
描述
Standard SRAM, 128KX8, 15ns, CMOS, PDSO32

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K6R1008V1C-JC15T 数据手册

PRELIMINARY

CMOS SRAM

K6R1008V1C-C/C-L, K6R1008V1C-I/C-P

Document Title

128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev.No.

Rev. 0.0

Rev. 1.0

History

Draft Data

Remark

Initial release with Preliminary.

Aug. 5. 1998

Sep. 7. 1998

Preliminary

Relax DC characteristics.

Item

70mA

68mA

Changed

75mA

73mA

ICC

12ns

15ns

20ns

65mA

70mA

Rev. 2.0

Release to Final Data Sheet.

2.1. Delete Preliminary.

Mar. 3. 1999

Final

2.2. Changed Standby Current.

Item

0.3mA

Changed

0.5mA

Standby Current(Isb1)

2.3. Added Data Retention Characteristics.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Revision 2.0

March 1999

- 1 -

12 3 4 5 6 7...9

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