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K6R1008V1C-JI12T PDF预览

K6R1008V1C-JI12T

更新时间: 2023-01-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
9页 183K
描述
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32

K6R1008V1C-JI12T 数据手册

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PRELIMINARY  
PRELIMINARY  
CMOS SRAM  
K6R1008V1C-C/C-L, K6R1008V1C-I/C-P  
Document Title  
128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
Rev.No.  
Rev. 0.0  
Rev. 1.0  
History  
Draft Data  
Remark  
Initial release with Preliminary.  
Aug. 5. 1998  
Sep. 7. 1998  
Preliminary  
Preliminary  
Relax DC characteristics.  
Item  
Previous  
70mA  
68mA  
Changed  
75mA  
73mA  
ICC  
12ns  
15ns  
20ns  
65mA  
70mA  
Rev. 2.0  
Release to Final Data Sheet.  
2.1. Delete Preliminary.  
Mar. 3. 1999  
Final  
2.2. Changed Standby Current.  
Item  
Previous  
0.3mA  
Changed  
0.5mA  
Standby Current(Isb1)  
2.3. Added Data Retention Characteristics.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Revision 2.0  
March 1999  
- 1 -  

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