Datasheet > K6R1008V1C-I10

K6R1008V1C-I10

更新时间： 2022-11-11 21:24:10

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
9页	138K
描述
128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).

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K6R1008V1C-I10 数据手册

PRELIMINARY

CMOS SRAM

K6R1008V1C-C/C-L, K6R1008V1C-I/C-P

Document Title

128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev.No.

Rev. 0.0

Rev. 1.0

History

Draft Data

Aug. 5. 1998

Sep. 7. 1998

Remark

Initial release with Preliminary.

Preliminary

Relax DC characteristics.

Item

70mA

68mA

Changed

75mA

73mA

ICC

12ns

15ns

20ns

65mA

70mA

Rev. 2.0

Release to Final Data Sheet.

2.1. Delete Preliminary.

Mar. 3. 1999

Final

2.2. Changed Standby Current.

Item

0.3mA

Changed

0.5mA

Standby Current(Isb1)

2.3. Added Data Retention Characteristics.

Rev. 3.0

Rev. 3.1

Add 10ns part.

Apr. 24. 2000

Oct. 2. 2000

Final

VIH/VIL Change

Changed

Item

Min

2.0

-0.5

Max

VCC+0.5

0.8

Min

2.0

-0.3

Max

VCC+0.3

0.8

VIH

VIL

Rev. 4.0

Sep. 24. 2001

Final

Delete 20ns speed bin

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Revision 4.0

September 2001

- 1 -

12 3 4 5 6 7...9

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