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K6R1004C1A

更新时间: 2024-11-05 03:47:07
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
8页 127K
描述
256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

K6R1004C1A 数据手册

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PRELIMINARY  
K6R1004C1A-C  
CMOS SRAM  
Document Title  
256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out.  
Revision History  
Rev.No.  
Rev. 0.0  
Rev. 1.0  
History  
DraftData  
Remark  
Initial release with Preliminary.  
Apr. 22th, 1995  
Feb. 29th, 1996  
Preliminary  
Final  
Release to final Data Sheet.  
1.1. Delete Preliminary  
Rev. 2.0  
Update D.C parameters.  
Jul. 16th, 1996  
Final  
2.1. Update D.C parameters.  
Previous spec.  
Updated spec.  
(12/15/17/20ns part)  
150/145/145/140mA  
25mA  
Items  
(12/15/17/20ns part)  
200/190/180/170mA  
30mA  
Icc  
Isb  
Isb1  
10mA  
8mA  
Rev. 3.0  
Add Industrial Temperature Range parts.  
Jun. 2nd, 1997  
Final  
3.1. Add Industrial Temperature Range parts with the same parame-  
ters as Commercial Temperature Range parts.  
3.1.1. Add K6R1004C1A parts for Industrial Temperature Range.  
3.1.2. Add ordering information.  
3.1.3. Add the condition for operating at Industrial Temp. Range.  
3.2. Add the test condition for VOH1 with VCC=5V±5% at 25°C  
3.3. Add timing diagram to define tWP as ²(Timing Wave Form of  
Write Cycle(CS=Controlled)²  
Rev. 4.0  
4.1. Delete Industrial Temperature Range Part  
4.2. Delete TSOP2 Package  
Feb. 25th, 1998  
Final  
4.3. Delete 17ns Part  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 4.0  
February 1998  
- 1 -  

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