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K6R1004C1A-JC12 PDF预览

K6R1004C1A-JC12

更新时间: 2024-09-15 19:29:19
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 124K
描述
Standard SRAM, 256KX4, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

K6R1004C1A-JC12 技术参数

生命周期:Obsolete零件包装代码:SOJ
包装说明:SOJ,针数:32
Reach Compliance Code:unknownECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:12 nsJESD-30 代码:R-PDSO-J32
长度:20.96 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:4
功能数量:1端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX4
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:3.76 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

K6R1004C1A-JC12 数据手册

 浏览型号K6R1004C1A-JC12的Datasheet PDF文件第2页浏览型号K6R1004C1A-JC12的Datasheet PDF文件第3页浏览型号K6R1004C1A-JC12的Datasheet PDF文件第4页浏览型号K6R1004C1A-JC12的Datasheet PDF文件第5页浏览型号K6R1004C1A-JC12的Datasheet PDF文件第6页浏览型号K6R1004C1A-JC12的Datasheet PDF文件第7页 
PRELIMINARY  
K6R1004C1A-C  
CMOS SRAM  
Document Title  
256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out.  
Revision History  
Rev.No.  
Rev. 0.0  
Rev. 1.0  
History  
DraftData  
Remark  
Initial release with Preliminary.  
Apr. 22th, 1995  
Feb. 29th, 1996  
Preliminary  
Final  
Release to final Data Sheet.  
1.1. Delete Preliminary  
Rev. 2.0  
Update D.C parameters.  
Jul. 16th, 1996  
Final  
2.1. Update D.C parameters.  
Previous spec.  
Updated spec.  
(12/15/17/20ns part)  
150/145/145/140mA  
25mA  
Items  
(12/15/17/20ns part)  
200/190/180/170mA  
30mA  
Icc  
Isb  
Isb1  
10mA  
8mA  
Rev. 3.0  
Add Industrial Temperature Range parts.  
Jun. 2nd, 1997  
Final  
3.1. Add Industrial Temperature Range parts with the same parame-  
ters as Commercial Temperature Range parts.  
3.1.1. Add K6R1004C1A parts for Industrial Temperature Range.  
3.1.2. Add ordering information.  
3.1.3. Add the condition for operating at Industrial Temp. Range.  
3.2. Add the test condition for VOH1 with VCC=5V±5% at 25°C  
3.3. Add timing diagram to define tWP as ²(Timing Wave Form of  
Write Cycle(CS=Controlled)²  
Rev. 4.0  
4.1. Delete Industrial Temperature Range Part  
4.2. Delete TSOP2 Package  
Feb. 25th, 1998  
Final  
4.3. Delete 17ns Part  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 4.0  
February 1998  
- 1 -  

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