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K6F1008V2C-YF550 PDF预览

K6F1008V2C-YF550

更新时间: 2024-02-03 10:03:18
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 97K
描述
Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32

K6F1008V2C-YF550 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1, TSSOP32,.56,20
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.91最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
长度:11.8 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.56,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:3.3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.000001 A最小待机电流:1.5 V
子类别:SRAMs最大压摆率:0.035 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mmBase Number Matches:1

K6F1008V2C-YF550 数据手册

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K6F1008V2C Family  
CMOS SRAM  
Document Title  
128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
Initial Draft  
November 27, 2001  
Preliminary  
0.1  
Revise  
December 13, 2001  
Preliminary  
- Changed Package Type  
: 48(36)-TBGA-6.00x7.00 to 32-TSOP1-0813.4F  
1.0  
2.0  
Finalize  
June 12, 2002  
March 9, 2005  
Final  
Final  
Revise  
- Added Lead Free products  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 2.0  
March 2005  

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