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K6F1008V2M-GI85 PDF预览

K6F1008V2M-GI85

更新时间: 2023-03-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
11页 222K
描述
Standard SRAM, 128KX8, 85ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32

K6F1008V2M-GI85 数据手册

 浏览型号K6F1008V2M-GI85的Datasheet PDF文件第2页浏览型号K6F1008V2M-GI85的Datasheet PDF文件第3页浏览型号K6F1008V2M-GI85的Datasheet PDF文件第4页浏览型号K6F1008V2M-GI85的Datasheet PDF文件第5页浏览型号K6F1008V2M-GI85的Datasheet PDF文件第6页浏览型号K6F1008V2M-GI85的Datasheet PDF文件第7页 
K6F1008V2M, K6F1008S2M, K6F1008R2M Family  
CMOS SRAM  
Document Title  
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
0.1  
Initial draft  
March 15, 1996  
July 7, 1996  
Advance  
Revise  
Preliminary  
- Erase 100ns from KM68FS1000 Family  
- Add 150ns for KM68FS1000 Family  
- Add 32-sTSOP1 new package  
- Add high power version  
ISB1=5.0mA(Max)  
- Change VDR(Min) 1.0 to 1.5V  
1.0  
Finalize  
December 1, 1996  
Final  
- Concept change high power version to low low power version  
ISB1=5.0mA(Max)  
- Change super low power version with special handling  
ISB1=1.0mA(Max)  
- Icc & Icc1(Read) decrease 10 to 5mA  
2.0  
3.0  
Revise  
February 26, 1998  
July 29, 1998  
Final  
Final  
- Change datasheet format  
- Remove reverse type package from product  
- Remove reserved speed bin(100ns)  
Revise  
- Add CSP type packaged product.  
- Improved ICC2  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 3.0  
1
July 1998  

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