Datasheet > K6E1004C1B-C20

K6E1004C1B-C20

更新时间： 2024-02-09 01:18:46

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
9页	134K
描述
256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out

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K6E1004C1B-C20 数据手册

PRELIMINARY

K6E1004C1B-C/B-L

CMOS SRAM

Document Title

256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out.

Revision History

Rev.No.

Rev. 0.0

Rev.1.0

History

Draft Data

Remark

Initial release with Design Target.

Feb. 1st 1997

Jun. 1st 1997

Design Target

Preliminary

Release to Preliminary Data Sheet.

1.1. Replace Design Target to Preliminary.

Rev. 2.0

Release to Final Data Sheet.

Feb. 6th 1998

Final

2.1. Delete Preliminary.

2.2. Delete 17ns, L-version and Industrial Temperature Part.

2.3. Delete VOH1=3.95V.

2.4. Delete Data Retention Characteristics and Wave form.

2.5. Relex operating current.

Speed

15ns

17ns

20ns

120mA

110mA

100mA

Now

120mA

118mA

Rev.3.0

3.1. Add Low power Version.

Jul. 28th 1998

Final

3.2. Add Data Retention chcracteristics.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev. 3.0

July 1998

- 1 -

12 3 4 5 6 7...9

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