Datasheet > K6E1008C1B-J20

K6E1008C1B-J20

更新时间： 2024-09-25 19:52:15

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
9页	187K
描述
SRAM

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中文翻译

获取价格

技术参数
数据手册

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K6E1008C1B-J20 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.88	Base Number Matches：	1

K6E1008C1B-J20 数据手册

PRELIMINARY

K6E1008C1B-C

CMOS SRAM

Document Title

128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.

Revision History

Rev.No.

Rev. 0.0

Rev. 1.0

History

Draft Data

Remark

Initial release with Design Target.

Feb. 1st 1997

Jun. 1st 1997

Design Target

Preliminary

Release to Preliminary Data Sheet.

1.1. Replace Design Target to Preliminary.

Rev. 2.0

Release to Final Data Sheet.

Feb. 6th 1998

Final

2.1. Delete Preliminary.

2.2. Delete 17ns, L-version and Industrial Temperature Part.

2.3. Delete VOH1=3.95V.

2.4. Delete Data Retention Characteristics and Wave form.

2.5. Relex operating current.

Speed

15ns

17ns

20ns

130mA

120mA

110mA

Now

125mA

123mA

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev 2.0

February 1998

- 1 -

12 3 4 5 6 7...9

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K6E1008C1B-S15	SAMSUNG	获取价格	SRAM
K6E1008C1B-S20	SAMSUNG	获取价格	SRAM
K6E1008C1B-SC20	SAMSUNG	获取价格	Standard SRAM, 128KX8, 20ns, CMOS, PDSO32
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K6F1008R2A-FI70	SAMSUNG	获取价格	Standard SRAM, 128KX8, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48
K6F1008R2A-YI10	SAMSUNG	获取价格	Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32
K6F1008R2A-YI10T	SAMSUNG	获取价格	Standard SRAM, 128KX8, 100ns, CMOS, PDSO32