Datasheet > K6E0808V1E-TC12

K6E0808V1E-TC12

更新时间： 2023-01-02 23:18:18

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
8页	169K
描述
Standard SRAM, 32KX8, 12ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28

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K6E0808V1E-TC12 数据手册

K6E0808V1E-C/E-L, K6E0808V1E-I/E-P

CMOS SRAM

Document Title

32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

History

Rev.No.

Rev. 0.0

Rev. 1.0

Draft Data

Remark

Preliminary

Final

Initial release with preliminary.

Aug. 1. 1998

Sep. 7. 1998

Release to Final Data Sheet.

1.1 Delete Preliminary.

1.2 Relex Standby current.

Item

Current

0.5mA

2mA

Remark

L-ver.

Normal

Isb1

0.3mA

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Revision 1.0

August 1998

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
K6E0808V1E-TI12	SAMSUNG	获取价格	Standard SRAM, 32KX8, 12ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28
K6E0808V1E-TI20	SAMSUNG	获取价格	Standard SRAM, 32KX8, 20ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28
K6E0808V1E-TL12	SAMSUNG	获取价格	Standard SRAM, 32KX8, 12ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28
K6E0808V1E-TL20	SAMSUNG	获取价格	Standard SRAM, 32KX8, 20ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28
K6E0808V1E-TP20	SAMSUNG	获取价格	Standard SRAM, 32KX8, 20ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28
K6E1004B-J15	SAMSUNG	获取价格	SRAM
K6E1004B-J20	SAMSUNG	获取价格	SRAM
K6E1004C1B	SAMSUNG	获取价格	256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out
K6E1004C1B-C15	SAMSUNG	获取价格	256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out
K6E1004C1B-C20	SAMSUNG	获取价格	256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out