Datasheet > K4X56163PG-FEC30

K4X56163PG-FEC30

更新时间： 2023-01-02 16:35:39

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器双倍数据速率
页数	文件大小	规格书
23页	217K
描述
DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, LEAD FREE, FBGA-60

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中文翻译

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数据手册

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K4X56163PG-FEC30 数据手册

K4X56163PG - L(F)E/G

Mobile-DDR SDRAM

16M x16 Mobile-DDR SDRAM

FEATURES

• 1.8V power supply, 1.8V I/O power

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe(DQS)

• Four banks operation

• Differential clock inputs(CK and CK)

• MRS cycle with address key programs

- CAS Latency ( 2, 3 )

- Burst Length ( 2, 4, 8, 16 )

- Burst Type (Sequential & Interleave)

- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )

- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )

• Internal Temperature Compensated Self Refresh

• Deep Power Down Mode

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).

• Data I/O transactions on both edges of data strobe, DM for masking.

• Edge aligned data output, center aligned data input.

• No DLL; CK to DQS is not synchronized.

• LDM/UDM for write masking only.

• Auto refresh duty cycle

- 7.8us for -25 to 85 °C

Operating Frequency

DDR266

DDR222

66Mhz

Speed @CL2^*1

Speed @CL3^*1

83Mhz

133Mhz

111Mhz

Note :

1. CAS Latency

Address configuration

Organization

Bank

BA0,BA1

Row

Column

16M x16

A0 - A12

A0 - A8

- DM is internally loaded to match DQ and DQS identically.

Ordering Information

Part No.

Max Freq.

Interface

LVCMOS

Package

K4X56163PG-L(F)GC3

K4X56163PG-L(F)GCA

133MHz(CL=3),83MHz(CL=2)

111MHz(CL=3),66MHz(CL=2)

60FBGA

Pb (Pb Free)

- L(F)E : 60FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 °C ~ 85 °C)

- L(F)G : 60FBGA Pb(Pb Free), Low Power, Extended Temperature(-25 °C ~ 85 °C)

- C3/CA : 133MHz(CL=3) / 111MHz(CL=3)

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-

VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could

result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-

visions may apply.

January 2006

12 3 4 5 6 7...23

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与K4X56163PG-FEC30相关器件

型号	品牌	获取价格	描述	数据表
K4X56163PG-FECA0	SAMSUNG	获取价格	DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, LEAD FREE, FBGA-60
K4X56163PG-FGC30	SAMSUNG	获取价格	DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, LEAD FREE, FBGA-60
K4X56163PG-FGCA	SAMSUNG	获取价格	DDR DRAM, 16MX16, 6ns, CMOS, PBGA60,
K4X56163PG-FGCA0	SAMSUNG	获取价格	DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, LEAD FREE, FBGA-60
K4X56163PG-LGC30	SAMSUNG	获取价格	DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, FBGA-60
K4X56163PG-LGCA0	SAMSUNG	获取价格	DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, FBGA-60
K4X56163PI-L(F)E/GC3	SAMSUNG	获取价格	16Mx16 Mobile DDR SDRAM
K4X56163PI-L(F)E/GC6	SAMSUNG	获取价格	16Mx16 Mobile DDR SDRAM
K4X56163PI-LFE/GC3	SAMSUNG	获取价格	16Mx16 Mobile DDR SDRAM
K4X56163PI-LFE/GC6	SAMSUNG	获取价格	16Mx16 Mobile DDR SDRAM

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