Datasheet > K4X56163PI-LFE/GC6

K4X56163PI-LFE/GC6

更新时间： 2024-01-11 00:36:33

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器双倍数据速率
页数	文件大小	规格书
20页	526K
描述
16Mx16 Mobile DDR SDRAM

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中文翻译

获取价格

数据手册

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K4X56163PI - L(F)E/G

Mobile DDR SDRAM

16Mx16 Mobile DDR SDRAM

1. FEATURES

• VDD/VDDQ = 1.8V/1.8V

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe(DQS)

• Four banks operation

• Differential clock inputs(CK and CK)

• MRS cycle with address key programs

- CAS Latency ( 2, 3 )

- Burst Length ( 2, 4, 8, 16 )

- Burst Type (Sequential & Interleave)

• EMRS cycle with address key programs

- Partial Array Self Refresh ( Full, 1/2, 1/4 Array )

- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )

• Internal Temperature Compensated Self Refresh

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).

• Data I/O transactions on both edges of data strobe, DM for masking.

• Edge aligned data output, center aligned data input.

• No DLL; CK to DQS is not synchronized.

• DM0 - DM3 for write masking only.

• Auto refresh duty cycle

- 7.8us for -25 to 85 °C

2. Operating Frequency

DDR333

DDR266

83Mhz

Speed @CL2¹⁾

83Mhz

Speed @CL3¹⁾

166Mhz

133Mhz

NOTE :

1) CAS Latency

3. Address configuration

Organization

Bank Address

Row Address

Column Address

16Mx16

BA0,BA1

A0 - A12

A0 - A8

- DM is internally loaded to match DQ and DQS identically.

4. Ordering Information

Part No.

Max Freq.

Interface

LVCMOS

Package

K4X56163PI-L(F)E/GC6

K4X56163PI-L(F)E/GC3

166MHz(CL=3),83MHz(CL=2)

133MHz(CL=3),83MHz(CL=2)

60FBGA

Pb (Pb Free)

- L(F)E : 60FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 °C ~ 85 °C)

- L(F)G : 60FBGA Pb(Pb Free), Low Power, Extended Temperature(-25 °C ~ 85 °C)

- C6/C3 : 166MHz(CL=3) / 133MHz(CL=3)

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTH-

ING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY

INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS"

BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in

loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.

October 2007

- 4 -

12 3 4 5 6 7...20

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与K4X56163PI-LFE/GC6相关器件

型号	品牌	获取价格	描述	数据表
K4X56163P-L	SAMSUNG	获取价格	16Mx16 Mobile DDR SDRAM
K4X56323PG	SAMSUNG	获取价格	8M x32 Mobile-DDR SDRAM
K4X56323PG-7EC3	SAMSUNG	获取价格	8M x32 Mobile-DDR SDRAM
K4X56323PG-7EC30	SAMSUNG	获取价格	DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90
K4X56323PG-7EC3T	SAMSUNG	获取价格	DDR DRAM, 8MX32, 6ns, CMOS, PBGA90,
K4X56323PG-7ECA	SAMSUNG	获取价格	8M x32 Mobile-DDR SDRAM
K4X56323PG-7ECA0	SAMSUNG	获取价格	DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90
K4X56323PG-7ECAT	SAMSUNG	获取价格	DDR DRAM, 8MX32, 6ns, CMOS, PBGA90,
K4X56323PG-7GC3	SAMSUNG	获取价格	8M x32 Mobile-DDR SDRAM
K4X56323PG-7GC30	SAMSUNG	获取价格	DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90

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