Datasheet > K4X56323PG-7EC3T

K4X56323PG-7EC3T

更新时间： 2023-02-26 14:47:07

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器双倍数据速率
页数	文件大小	规格书
23页	242K
描述
DDR DRAM, 8MX32, 6ns, CMOS, PBGA90,

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K4X56323PG-7EC3T 数据手册

K4X56323PG - 7(8)E/G

Mobile-DDR SDRAM

8M x32 Mobile-DDR SDRAM

FEATURES

• 1.8V power supply, 1.8V I/O power

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe(DQS)

• Four banks operation

• Differential clock inputs(CK and CK)

• MRS cycle with address key programs

- CAS Latency ( 2, 3 )

- Burst Length ( 2, 4, 8, 16 )

- Burst Type (Sequential & Interleave)

- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )

- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )

• Internal Temperature Compensated Self Refresh

• Deep Power Down Mode

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).

• Data I/O transactions on both edges of data strobe, DM for masking.

• Edge aligned data output, center aligned data input.

• No DLL; CK to DQS is not synchronized.

• DM0 - DM3 for write masking only.

• Auto refresh duty cycle

- 15.6us for -25 to 85 °C

Operating Frequency

DDR266

DDR222

66Mhz

Speed @CL2^*1

Speed @CL3^*1

83Mhz

133Mhz

111Mhz

Note :

1. CAS Latency

Address configuration

Organization

Bank

BA0,BA1

Row

Column

8M x32

A0 - A11

A0 - A8

- DM is internally loaded to match DQ and DQS identically.

Ordering Information

Part No.

Max Freq.

Interface

LVCMOS

Package

K4X56323PG-7(8)E/GC3

K4X56323PG-7(8)E/GCA

133MHz(CL=3),83MHz(CL=2)

111MHz(CL=3),66MHz(CL=2)

90FBGA

Pb (Pb Free)

- 7(8)E 90FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 °C ~ 85 °C)

- 7(8)G : 90 FBGA Pb(Pb Free), Low Power, Extended Temperature(-25 °C ~ 85 °C)

- C3/CA : 133MHz(CL=3)/111MHz(CL=3)

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-

VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could

result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-

visions may apply.

January 2006

12 3 4 5 6 7...23

中文翻译

下载PDF

与K4X56323PG-7EC3T相关器件

型号	品牌	获取价格	描述	数据表
K4X56323PG-7ECA	SAMSUNG	获取价格	8M x32 Mobile-DDR SDRAM
K4X56323PG-7ECA0	SAMSUNG	获取价格	DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90
K4X56323PG-7ECAT	SAMSUNG	获取价格	DDR DRAM, 8MX32, 6ns, CMOS, PBGA90,
K4X56323PG-7GC3	SAMSUNG	获取价格	8M x32 Mobile-DDR SDRAM
K4X56323PG-7GC30	SAMSUNG	获取价格	DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90
K4X56323PG-7GCA	SAMSUNG	获取价格	8M x32 Mobile-DDR SDRAM
K4X56323PG-7GCAT	SAMSUNG	获取价格	DDR DRAM, 8MX32, 6ns, CMOS, PBGA90,
K4X56323PG-8EC3	SAMSUNG	获取价格	8M x32 Mobile-DDR SDRAM
K4X56323PG-8EC30	SAMSUNG	获取价格	DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4X56323PG-8EC3T	SAMSUNG	获取价格	DDR DRAM, 8MX32, 6ns, CMOS, PBGA90,

与K4X56323PG-7EC3T相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

9
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

9
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

11
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

13

产品中心

服务支持

精选活动

关于我们

帮助中心

K4X56323PG-7EC3T

K4X56323PG-7EC3T 数据手册

与K4X56323PG-7EC3T相关器件

与K4X56323PG-7EC3T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

K4X56323PG-7EC3T

K4X56323PG-7EC3T 数据手册

与K4X56323PG-7EC3T相关器件

与K4X56323PG-7EC3T相关文章

您还可以找

您在本页遇到什么问题？