是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FBGA, BGA90,9X15,32 | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 最长访问时间: | 6 ns |
最大时钟频率 (fCLK): | 133 MHz | I/O 类型: | COMMON |
交错的突发长度: | 2,4,8,16 | JESD-30 代码: | R-PBGA-B90 |
内存密度: | 268435456 bit | 内存集成电路类型: | DDR DRAM |
内存宽度: | 32 | 端子数量: | 90 |
字数: | 8388608 words | 字数代码: | 8000000 |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 8MX32 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA90,9X15,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 电源: | 1.8 V |
认证状态: | Not Qualified | 刷新周期: | 8192 |
连续突发长度: | 2,4,8,16 | 最大待机电流: | 0.0003 A |
子类别: | DRAMs | 最大压摆率: | 0.14 mA |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4X56323PG-8ECA | SAMSUNG |
获取价格 |
8M x32 Mobile-DDR SDRAM |
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K4X56323PG-8ECA0 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 |
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K4X56323PG-8ECAT | SAMSUNG |
获取价格 |
DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, |
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K4X56323PG-8GC3 | SAMSUNG |
获取价格 |
8M x32 Mobile-DDR SDRAM |
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K4X56323PG-8GC30 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 |
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K4X56323PG-8GCA | SAMSUNG |
获取价格 |
8M x32 Mobile-DDR SDRAM |
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K4X56323PG-8GCA0 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 |
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K4X56323PI-7EC6 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX32, 5.5ns, CMOS, PBGA90 |
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K4X56323PI-7GC30 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 |
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K4X56323PI-8EC6 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX32, 5.5ns, CMOS, PBGA90 |
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