Datasheet > K4X56163PG-FGCA

K4X56163PG-FGCA

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		时钟动态存储器双倍数据速率内存集成电路
页数	文件大小	规格书
23页	217K
描述
DDR DRAM, 16MX16, 6ns, CMOS, PBGA60,

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技术参数
数据手册

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K4X56163PG-FGCA 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	FBGA, BGA60,9X10,32	Reach Compliance Code：	compliant
风险等级：	5.84	最长访问时间：	6 ns
最大时钟频率 (fCLK)：	111 MHz	I/O 类型：	COMMON
交错的突发长度：	2,4,8,16	JESD-30 代码：	R-PBGA-B60
内存密度：	268435456 bit	内存集成电路类型：	DDR DRAM
内存宽度：	16	端子数量：	60
字数：	16777216 words	字数代码：	16000000
最高工作温度：	85 °C	最低工作温度：	-25 °C
组织：	16MX16	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	FBGA
封装等效代码：	BGA60,9X10,32	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, FINE PITCH	电源：	1.8 V
认证状态：	Not Qualified	刷新周期：	8192
连续突发长度：	2,4,8,16	最大待机电流：	0.0003 A
子类别：	DRAMs	最大压摆率：	0.09 mA
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	OTHER
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	Base Number Matches：	1

K4X56163PG-FGCA 数据手册

K4X56163PG - L(F)E/G

Mobile-DDR SDRAM

16M x16 Mobile-DDR SDRAM

FEATURES

• 1.8V power supply, 1.8V I/O power

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe(DQS)

• Four banks operation

• Differential clock inputs(CK and CK)

• MRS cycle with address key programs

- CAS Latency ( 2, 3 )

- Burst Length ( 2, 4, 8, 16 )

- Burst Type (Sequential & Interleave)

- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )

- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )

• Internal Temperature Compensated Self Refresh

• Deep Power Down Mode

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).

• Data I/O transactions on both edges of data strobe, DM for masking.

• Edge aligned data output, center aligned data input.

• No DLL; CK to DQS is not synchronized.

• LDM/UDM for write masking only.

• Auto refresh duty cycle

- 7.8us for -25 to 85 °C

Operating Frequency

DDR266

DDR222

66Mhz

Speed @CL2^*1

Speed @CL3^*1

83Mhz

133Mhz

111Mhz

Note :

1. CAS Latency

Address configuration

Organization

Bank

BA0,BA1

Row

Column

16M x16

A0 - A12

A0 - A8

- DM is internally loaded to match DQ and DQS identically.

Ordering Information

Part No.

Max Freq.

Interface

LVCMOS

Package

K4X56163PG-L(F)GC3

K4X56163PG-L(F)GCA

133MHz(CL=3),83MHz(CL=2)

111MHz(CL=3),66MHz(CL=2)

60FBGA

Pb (Pb Free)

- L(F)E : 60FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 °C ~ 85 °C)

- L(F)G : 60FBGA Pb(Pb Free), Low Power, Extended Temperature(-25 °C ~ 85 °C)

- C3/CA : 133MHz(CL=3) / 111MHz(CL=3)

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-

VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could

result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-

visions may apply.

January 2006

12 3 4 5 6 7...23

中文翻译

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与K4X56163PG-FGCA相关器件

型号	品牌	获取价格	描述	数据表
K4X56163PG-FGCA0	SAMSUNG	获取价格	DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, LEAD FREE, FBGA-60
K4X56163PG-LGC30	SAMSUNG	获取价格	DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, FBGA-60
K4X56163PG-LGCA0	SAMSUNG	获取价格	DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, FBGA-60
K4X56163PI-L(F)E/GC3	SAMSUNG	获取价格	16Mx16 Mobile DDR SDRAM
K4X56163PI-L(F)E/GC6	SAMSUNG	获取价格	16Mx16 Mobile DDR SDRAM
K4X56163PI-LFE/GC3	SAMSUNG	获取价格	16Mx16 Mobile DDR SDRAM
K4X56163PI-LFE/GC6	SAMSUNG	获取价格	16Mx16 Mobile DDR SDRAM
K4X56163P-L	SAMSUNG	获取价格	16Mx16 Mobile DDR SDRAM
K4X56323PG	SAMSUNG	获取价格	8M x32 Mobile-DDR SDRAM
K4X56323PG-7EC3	SAMSUNG	获取价格	8M x32 Mobile-DDR SDRAM

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