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K4T51163QE-ZLD5 PDF预览

K4T51163QE-ZLD5

更新时间: 2024-11-24 09:35:31
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率
页数 文件大小 规格书
47页 1017K
描述
DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA90

K4T51163QE-ZLD5 数据手册

 浏览型号K4T51163QE-ZLD5的Datasheet PDF文件第2页浏览型号K4T51163QE-ZLD5的Datasheet PDF文件第3页浏览型号K4T51163QE-ZLD5的Datasheet PDF文件第4页浏览型号K4T51163QE-ZLD5的Datasheet PDF文件第5页浏览型号K4T51163QE-ZLD5的Datasheet PDF文件第6页浏览型号K4T51163QE-ZLD5的Datasheet PDF文件第7页 
K4T51043QE  
K4T51083QE  
K4T51163QE  
DDR2 SDRAM  
512Mb E-die DDR2 SDRAM Specification  
60FBGA & 84FBGA with Lead-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.  
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.9 July 2008  
1 of 47  

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DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA90
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Consumer Memory
K4T51163QG-HCCC SAMSUNG

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DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84
K4T51163QG-HCD50 SAMSUNG

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DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
K4T51163QG-HCD5T SAMSUNG

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DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84
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DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84,
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DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84,
K4T51163QG-HCE7 SAMSUNG

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DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84