5秒后页面跳转
K4T51163QG-HCD50 PDF预览

K4T51163QG-HCD50

更新时间: 2024-11-19 14:42:59
品牌 Logo 应用领域
三星 - SAMSUNG 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
26页 536K
描述
DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84

K4T51163QG-HCD50 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA84,9X15,32
针数:84Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.28
风险等级:5.58Is Samacsys:N
访问模式:FOUR BANK PAGE BURST最长访问时间:0.5 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):267 MHz
I/O 类型:COMMON交错的突发长度:4,8
JESD-30 代码:R-PBGA-B84长度:12.5 mm
内存密度:536870912 bit内存集成电路类型:DDR DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:84
字数:33554432 words字数代码:32000000
工作模式:SYNCHRONOUS最高工作温度:95 °C
最低工作温度:组织:32MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA84,9X15,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8 V
认证状态:Not Qualified刷新周期:8192
座面最大高度:1.2 mm自我刷新:YES
连续突发长度:4,8最大待机电流:0.008 A
子类别:DRAMs最大压摆率:0.235 mA
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.5 mmBase Number Matches:1

K4T51163QG-HCD50 数据手册

 浏览型号K4T51163QG-HCD50的Datasheet PDF文件第2页浏览型号K4T51163QG-HCD50的Datasheet PDF文件第3页浏览型号K4T51163QG-HCD50的Datasheet PDF文件第4页浏览型号K4T51163QG-HCD50的Datasheet PDF文件第5页浏览型号K4T51163QG-HCD50的Datasheet PDF文件第6页浏览型号K4T51163QG-HCD50的Datasheet PDF文件第7页 
RDIMM  
DDR2 SDRAM  
DDR2 Registered SDRAM MODULE  
240pin Registered Module based on 512Mb E-die  
72-bit ECC  
60FBGA with Lead-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE  
CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-  
WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-  
OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT  
GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.4 August 2008  
1 of 26  

与K4T51163QG-HCD50相关器件

型号 品牌 获取价格 描述 数据表
K4T51163QG-HCD5T SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84
K4T51163QG-HCE6 SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84,
K4T51163QG-HCE6T SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84,
K4T51163QG-HCE7 SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84
K4T51163QG-HCE70 SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
K4T51163QG-HCF80 SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.35ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84
K4T51163QG-HCLCC SAMSUNG

获取价格

512Mb G-die DDR2 SDRAM Specification
K4T51163QG-HCLD5 SAMSUNG

获取价格

512Mb G-die DDR2 SDRAM Specification
K4T51163QG-HCLE6 SAMSUNG

获取价格

512Mb G-die DDR2 SDRAM Specification
K4T51163QG-HCLE7 SAMSUNG

获取价格

512Mb G-die DDR2 SDRAM Specification