是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | TFBGA, |
针数: | 90 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.24 |
风险等级: | 5.92 | 访问模式: | FOUR BANK PAGE BURST |
最长访问时间: | 7 ns | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | R-PBGA-B90 | 长度: | 13 mm |
内存密度: | 268435456 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 32 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 90 |
字数: | 8388608 words | 字数代码: | 8000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 组织: | 8MX32 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度): | 240 | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 2.7 V | 最小供电电压 (Vsup): | 2.3 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 8 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4S56323LF-FS60 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 | |
K4S56323LF-FS600 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | |
K4S56323LF-FS75 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90 | |
K4S56323LF-HC60 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 | |
K4S56323LF-HC75 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90 | |
K4S56323LF-HE1H | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90 | |
K4S56323LF-HE1L | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90 | |
K4S56323LF-HE60 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 | |
K4S56323LF-HE600 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | |
K4S56323LF-HE75 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90 |