是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.75 |
最长访问时间: | 7 ns | 最大时钟频率 (fCLK): | 111 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 1,2,4,8 |
JESD-30 代码: | R-PBGA-B90 | 内存密度: | 268435456 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 32 |
端子数量: | 90 | 字数: | 8388608 words |
字数代码: | 8000000 | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 组织: | 8MX32 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA90,9X15,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 电源: | 2.5 V |
认证状态: | Not Qualified | 刷新周期: | 4096 |
连续突发长度: | 1,2,4,8,FP | 最大待机电流: | 0.0005 A |
子类别: | DRAMs | 最大压摆率: | 0.15 mA |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4S56323LF-HE60 | SAMSUNG |
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Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 |
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K4S56323LF-HE600 | SAMSUNG |
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Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 |
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K4S56323LF-HE75 | SAMSUNG |
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Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90 |
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K4S56323LF-HL1L | SAMSUNG |
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Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90 |
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K4S56323LF-HL1L0 | SAMSUNG |
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Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 |
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K4S56323LF-HL75 | SAMSUNG |
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Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90 |
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K4S56323LF-HN1H | SAMSUNG |
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Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90 |
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K4S56323LF-HN1L | SAMSUNG |
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Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90 |
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K4S56323LF-HN1L0 | SAMSUNG |
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Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 |
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K4S56323LF-HN60 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 |
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