Datasheet > K4S56323PF-FG1L

K4S56323PF-FG1L

更新时间： 2024-01-20 23:03:50

品牌	Logo	应用领域
三星 - SAMSUNG		时钟动态存储器内存集成电路
页数	文件大小	规格书
12页	143K
描述
Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90

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K4S56323PF-FG1L 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.92
最长访问时间：	7 ns	最大时钟频率 (fCLK)：	111 MHz
I/O 类型：	COMMON	交错的突发长度：	1,2,4,8
JESD-30 代码：	R-PBGA-B90	JESD-609代码：	e0
内存密度：	268435456 bit	内存集成电路类型：	SYNCHRONOUS DRAM
内存宽度：	32	端子数量：	90
字数：	8388608 words	字数代码：	8000000
最高工作温度：	85 °C	最低工作温度：	-25 °C
组织：	8MX32	封装主体材料：	PLASTIC/EPOXY
封装代码：	FBGA	封装等效代码：	BGA90,9X15,32
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, FINE PITCH
电源：	1.8 V	认证状态：	Not Qualified
刷新周期：	4096	连续突发长度：	1,2,4,8,FP
最大待机电流：	0.0003 A	子类别：	DRAMs
最大压摆率：	0.16 mA	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	OTHER	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM

K4S56323PF-FG1L 数据手册

K4S56323PF-F(H)G/F

Mobile-SDRAM

2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

FEATURES

GENERAL DESCRIPTION

• 1.8V power supply.

The K4S56323PF is 268,435,456 bits synchronous high data

rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4S56323PF-F(H)G/F75

K4S56323PF-F(H)G/F90

K4S56323PF-F(H)G/F1L

133MHz(CL=3), 83MHz(CL2)

111MHz(CL=3), 83MHz(CL2)

90 FBGA Pb

(Pb Free)

LVCMOS

111MHz(CL=3)^*1, 66MHz(CL2)

- F(H)G : Low Power, Extended Temperature(-25°C ~ 85°C)

- F(H)F : Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific pur

pose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

Address configuration

Organization

Bank

Row

Column Address

8Mx32

BA0,BA1

A0 - A11

A0 - A8

September 2004

12 3 4 5 6 7...12

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与K4S56323PF-FG1L相关器件

型号	品牌	描述	获取价格	数据表
K4S56323PF-FG1L0	SAMSUNG	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90	获取价格
K4S56323PF-FG75	SAMSUNG	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90	获取价格
K4S56323PF-FG750	SAMSUNG	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90	获取价格
K4S56323PF-FG90	SAMSUNG	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90	获取价格
K4S56323PF-FG900	SAMSUNG	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90	获取价格
K4S56323PF-HF1L	SAMSUNG	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90	获取价格

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