Datasheet > K4S56163PF-BF1L

K4S56163PF-BF1L

更新时间： 2024-02-29 01:54:27

品牌	Logo	应用领域
三星 - SAMSUNG		时钟动态存储器内存集成电路
页数	文件大小	规格书
12页	114K
描述
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54

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中文翻译

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技术参数
数据手册

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K4S56163PF-BF1L 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.75
最长访问时间：	7 ns	最大时钟频率 (fCLK)：	111 MHz
I/O 类型：	COMMON	交错的突发长度：	1,2,4,8
JESD-30 代码：	S-PBGA-B54	内存密度：	268435456 bit
内存集成电路类型：	SYNCHRONOUS DRAM	内存宽度：	16
端子数量：	54	字数：	16777216 words
字数代码：	16000000	最高工作温度：	70 °C
最低工作温度：	-25 °C	组织：	16MX16
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	FBGA	封装等效代码：	BGA54,9X9,32
封装形状：	SQUARE	封装形式：	GRID ARRAY, FINE PITCH
电源：	1.8 V	认证状态：	Not Qualified
刷新周期：	8192	连续突发长度：	1,2,4,8,FP
最大待机电流：	0.0003 A	子类别：	DRAMs
最大压摆率：	0.085 mA	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	OTHER	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
Base Number Matches：	1

K4S56163PF-BF1L 数据手册

K4S56163PF - R(B)G/F

Mobile-SDRAM

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

FEATURES

GENERAL DESCRIPTION

• 1.8V power supply.

The K4S56163PF is 268,435,456 bits synchronous high data

rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (8K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4S56163PF-R(B)G/F75

K4S56163PF-R(B)G/F90

K4S56163PF-R(B)G/F1L

133MHz(CL3), 83MHz(CL2)

111MHz(CL3), 83MHz(CL2)

54 FBGA Pb

(Pb Free)

LVCMOS

111MHz(CL3)^*1, 66MHz(CL2)

- R(B)G : Low Power, Extended Temperature(-25°C ~ 85°C)

- R(B)F : Low Power, Commercial Temperature(-25°C ~ 70°C)

Notes :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific

purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

Address configuration

Organization

Bank

Row

Column Address

16M x 16

BA0, BA1

A0 - A12

A0 - A8

September 2004

12 3 4 5 6 7...12

中文翻译

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与K4S56163PF-BF1L相关器件

型号	品牌	获取价格	描述	数据表
K4S56163PF-BF1L0	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4S56163PF-BF75	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54
K4S56163PF-BF90	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54
K4S56163PF-BF900	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4S56163PF-BG75	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54
K4S56163PF-BG750	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4S56163PF-BG750JR	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4S56163PF-BG90	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54
K4S56163PF-BG900	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4S56163PF-F1L	SAMSUNG	获取价格	4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

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