生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TFBGA, | 针数: | 54 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.24 | 风险等级: | 5.83 |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 6 ns |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | R-PBGA-B54 |
长度: | 11 mm | 内存密度: | 268435456 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 16 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 54 | 字数: | 16777216 words |
字数代码: | 16000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 16MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 1.95 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL EXTENDED |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4S56163PF-BG90 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54 | |
K4S56163PF-BG900 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 | |
K4S56163PF-F1L | SAMSUNG |
获取价格 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
K4S56163PF-F90 | SAMSUNG |
获取价格 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
K4S56163PF-RF1L | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54 | |
K4S56163PF-RF75 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54 | |
K4S56163PF-RF750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, FBGA-54 | |
K4S56163PF-RG | SAMSUNG |
获取价格 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
K4S56163PF-RG/F1L | SAMSUNG |
获取价格 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
K4S56163PF-RG/F75 | SAMSUNG |
获取价格 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |