是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.81 |
最长访问时间: | 6 ns | 最大时钟频率 (fCLK): | 133 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 1,2,4,8 |
JESD-30 代码: | S-PBGA-B54 | 内存密度: | 268435456 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 16 |
端子数量: | 54 | 字数: | 16777216 words |
字数代码: | 16000000 | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 组织: | 16MX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA54,9X9,32 |
封装形状: | SQUARE | 封装形式: | GRID ARRAY, FINE PITCH |
电源: | 1.8 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 连续突发长度: | 1,2,4,8,FP |
最大待机电流: | 0.0003 A | 子类别: | DRAMs |
最大压摆率: | 0.085 mA | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4S56163PF-BG750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, LEAD FREE, FBGA-54 | |
K4S56163PF-BG750JR | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, LEAD FREE, FBGA-54 | |
K4S56163PF-BG90 | SAMSUNG |
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Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54 | |
K4S56163PF-BG900 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 | |
K4S56163PF-F1L | SAMSUNG |
获取价格 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
K4S56163PF-F90 | SAMSUNG |
获取价格 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
K4S56163PF-RF1L | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54 | |
K4S56163PF-RF75 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54 | |
K4S56163PF-RF750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, FBGA-54 | |
K4S56163PF-RG | SAMSUNG |
获取价格 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |