Datasheet > K4S56163PF-RG1L0

K4S56163PF-RG1L0

更新时间： 2023-02-26 14:18:25

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	114K
描述
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, FBGA-54

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中文翻译

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数据手册

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K4S56163PF-RG1L0 数据手册

K4S56163PF - R(B)G/F

Mobile-SDRAM

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

FEATURES

GENERAL DESCRIPTION

• 1.8V power supply.

The K4S56163PF is 268,435,456 bits synchronous high data

rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (8K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4S56163PF-R(B)G/F75

K4S56163PF-R(B)G/F90

K4S56163PF-R(B)G/F1L

133MHz(CL3), 83MHz(CL2)

111MHz(CL3), 83MHz(CL2)

54 FBGA Pb

(Pb Free)

LVCMOS

111MHz(CL3)^*1, 66MHz(CL2)

- R(B)G : Low Power, Extended Temperature(-25°C ~ 85°C)

- R(B)F : Low Power, Commercial Temperature(-25°C ~ 70°C)

Notes :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific

purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

Address configuration

Organization

Bank

Row

Column Address

16M x 16

BA0, BA1

A0 - A12

A0 - A8

September 2004

12 3 4 5 6 7...12

中文翻译

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与K4S56163PF-RG1L0相关器件

型号	品牌	获取价格	描述	数据表
K4S56163PF-RG750	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, FBGA-54
K4S56163PF-RG90	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54
K4S56163PF-RG900	SAMSUNG	获取价格	Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, FBGA-54
K4S563233F	SAMSUNG	获取价格	2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S563233F-FC1L	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90
K4S563233F-FC60	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90
K4S563233F-FC600	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90
K4S563233F-FE1H	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90
K4S563233F-FE600	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90
K4S563233F-FF1H	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90

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