Datasheet > K4S51323LF-ML75

K4S51323LF-ML75

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	144K
描述
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90

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K4S51323LF-ML75 数据手册

K4S51323LF - M(E)C/L/F

Mobile SDRAM

AC OPERATING TEST CONDITIONS^(VDD = 2.5V ± 0.2V, TA = -25 to 70°C)

Parameter

AC input levels (Vih/Vil)

Value

0.9 x VDDQ / 0.2

0.5 x VDDQ

tr/tf = 1/1

Unit

Input timing measurement reference level

Input rise and fall time

Output timing measurement reference level

Output load condition

0.5 x VDDQ

See Figure 2

VDDQ

500Ω

Vtt=0.5 x VDDQ

VOH (DC) = VDDQ - 0.2V, IOH = -0.1mA

VOL (DC) = 0.2V, IOL = 0.1mA

30pF

Output

50Ω

500Ω

Output

Z0=50Ω

30pF

Figure 1. DC Output Load Circuit

Figure 2. AC Output Load Circuit

September 2004

1...3 4 567 8 9...12

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型号	品牌	描述	获取价格	数据表
K4S51323LF-ML750	SAMSUNG	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, FBGA-90	获取价格
K4S51323P	SAMSUNG	4M x 32Bit x 4 Banks Mobile-SDRAM	获取价格
K4S51323PF-EF1L	SAMSUNG	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90	获取价格
K4S51323PF-EF750	SAMSUNG	Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90	获取价格
K4S51323PF-EF900	SAMSUNG	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90	获取价格
K4S51323PF-MEF1L	SAMSUNG	4M x 32Bit x 4 Banks Mobile-SDRAM	获取价格