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K4S51323PF-MEF1L PDF预览

K4S51323PF-MEF1L

更新时间: 2024-11-06 22:30:15
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器手机
页数 文件大小 规格书
12页 143K
描述
4M x 32Bit x 4 Banks Mobile-SDRAM

K4S51323PF-MEF1L 数据手册

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K4S51323PF-M(E)F  
Mobile-SDRAM  
4M x 32Bit x 4 Banks Mobile-SDRAM  
FEATURES  
GENERAL DESCRIPTION  
• 1.8V power supply.  
The K4S51323PF is 536,870,912 bits synchronous high data  
rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,  
fabricated with SAMSUNG’s high performance CMOS technol-  
ogy. Synchronous design allows precise cycle control with the  
use of system clock and I/O transactions are possible on every  
clock cycle. Range of operating frequencies, programmable  
burst lengths and programmable latencies allow the same  
device to be useful for a variety of high bandwidth and high per-  
• LVCMOS compatible with multiplexed address.  
• Four banks operation.  
• MRS cycle with address key programs.  
-. CAS latency (1, 2 & 3).  
-. Burst length (1, 2, 4, 8 & Full page).  
-. Burst type (Sequential & Interleave).  
• EMRS cycle with address key programs.  
• All inputs are sampled at the positive going edge of the system formance memory system applications.  
clock.  
• Burst read single-bit write operation.  
• Special Function Support.  
-. PASR (Partial Array Self Refresh).  
-. Internal TCSR (Temperature Compensated Self Refresh)  
-. DS (Driver Strength)  
• DQM for masking.  
• Auto refresh.  
• 64ms refresh period (8K cycle).  
• Commercial Temperature Operation (-25°C ~ 70°C).  
• 2Chips DDP 90Balls FBGA( -MXXX -Pb, -EXXX -Pb Free).  
ORDERING INFORMATION  
Part No.  
Max Freq.  
Interface  
Package  
K4S51323PF-M(E)F75  
K4S51323PF-M(E)F90  
K4S51323PF-M(E)F1L  
133MHz(CL=3),83MHz(CL=2)  
111MHz(CL=3),83MHz(CL=2)  
90 FBGA Pb  
(Pb Free)  
LVCMOS  
111MHz(CL=3)*1,66MHz(CL2)  
- M(E)F : Low Power, Commercial Temperature(-25°C ~ 70°C)  
Notes :  
1. In case of 40MHz Frequency, CL1 can be supported.  
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is  
potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product  
contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.  
Address configuration  
Organization  
Bank  
Row  
Column Address  
16Mx32  
BA0,BA1  
A0 - A12  
A0 - A8  
1
September 2004  

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