Datasheet > K4S51323PF-MEF90

K4S51323PF-MEF90

更新时间： 2024-11-20 22:30:15

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器手机
页数	文件大小	规格书
12页	143K
描述
4M x 32Bit x 4 Banks Mobile-SDRAM

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中文翻译

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数据手册

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K4S51323PF-MEF90 数据手册

K4S51323PF-M(E)F

Mobile-SDRAM

4M x 32Bit x 4 Banks Mobile-SDRAM

FEATURES

GENERAL DESCRIPTION

• 1.8V power supply.

The K4S51323PF is 536,870,912 bits synchronous high data

rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system formance memory system applications.

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (8K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• 2Chips DDP 90Balls FBGA( -MXXX -Pb, -EXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4S51323PF-M(E)F75

K4S51323PF-M(E)F90

K4S51323PF-M(E)F1L

133MHz(CL=3),83MHz(CL=2)

111MHz(CL=3),83MHz(CL=2)

90 FBGA Pb

(Pb Free)

LVCMOS

111MHz(CL=3)^*1,66MHz(CL2)

- M(E)F : Low Power, Commercial Temperature(-25°C ~ 70°C)

Notes :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is

potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product

contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

Address configuration

Organization

Bank

Row

Column Address

16Mx32

BA0,BA1

A0 - A12

A0 - A8

September 2004

12 3 4 5 6 7...12

中文翻译

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与K4S51323PF-MEF90相关器件

型号	品牌	获取价格	描述	数据表
K4S51323PF-MF1L	SAMSUNG	获取价格	4M x 32Bit x 4 Banks Mobile-SDRAM
K4S51323PF-MF75	SAMSUNG	获取价格	4M x 32Bit x 4 Banks Mobile-SDRAM
K4S51323PF-MF90	SAMSUNG	获取价格	4M x 32Bit x 4 Banks Mobile-SDRAM
K4S51323PF-MF900	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90
K4S560432A	SAMSUNG	获取价格	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S560432A-TC/L1H	SAMSUNG	获取价格	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S560432A-TC/L1L	SAMSUNG	获取价格	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S560432A-TC/L75	SAMSUNG	获取价格	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S560432A-TC/L80	SAMSUNG	获取价格	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S560432A-TC1HT	SAMSUNG	获取价格	Synchronous DRAM, 64MX4, 6ns, CMOS, PDSO54

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