Datasheet > K4M513233E

K4M513233E

更新时间： 2024-11-10 22:47:47

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	142K
描述
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

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中文翻译

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K4M513233E 数据手册

K4M513233E - M(E)C/L/F

Mobile-SDRAM

4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

FEATURES

GENERAL DESCRIPTION

• 3.0V & 3.3V power supply.

The K4M513233E is 536,870,912 bits synchronous high data

rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (8K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• 2Chips DDP 90Balls FBGA with 0.8mm ball pitch

( -MXXX : Leaded, -EXXX : Lead Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4M513233E-M(E)C/L/F75

K4M513233E-M(E)C/L/F1H

K4M513233E-M(E)C/L/F1L

133MHz(CL=3)

105MHz(CL=2)

90 FBGA

Leaded (Lead Free)

LVCMOS

105MHz(CL=3)^*1

- M(E)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic

DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations or desk top

computers for the first three years of five year term of this license. Nothing herein limits the rights of Samsung to use Multi-Die Plastic DRAM in other

products or other applications under paragrangh such as mobile, telecom or non-computer application(which include by way of example laptop or

notebook computers, cell phones, televisions or visual monitors)

Violation may subject the customer to legal claims and also excludes any warranty against infringement from Samsung." .

3. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific

purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

February 2004

12 3 4 5 6 7...12

中文翻译

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与K4M513233E相关器件

型号	品牌	获取价格	描述	数据表
K4M513233E-EC1H0	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4M513233E-EF75	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90
K4M513233E-EF750	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4M513233E-EL1H	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90
K4M513233E-EL1H0	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4M513233E-EL750	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4M513233E-F1H	SAMSUNG	获取价格	4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M513233E-F1L	SAMSUNG	获取价格	4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M513233E-F75	SAMSUNG	获取价格	4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M513233E-L	SAMSUNG	获取价格	4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

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