Datasheet > K4F661612D-TI

K4F661612D-TI

更新时间： 2024-11-12 11:32:39

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
35页	386K
描述
4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

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中文翻译

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数据手册

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K4F661612D-TI 数据手册

Industrial Temperature

K4F661612D,K4F641612D

CMOS DRAM

4M x 16bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory

cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power)

are optional features of this family. All of this family have CAS -before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.

Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung¢s

advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES

• Fast Page Mode operation

• Part Identification

• 2CAS Byte/Word Read/Write operation

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• Fast parallel test mode capability

• LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

- K4F661612D-TI/P(3.3V, 8K Ref.)

- K4F641612D-TI/P(3.3V, 4K Ref.)

• ActivePowerDissipation

Unit : mW

Speed

-45

• Available in Plastic TSOP(II) packages

• +3.3V ±0.3V power supply

324

288

252

468

432

396

-50

•

Industrial Temperature operating ( -40~85°C )

-60

• Refresh Cycles

Part

NO.

Refresh

cycle

Refresh time

FUNCTIONAL BLOCK DIAGRAM

Normal

64ms

L-ver

K4F661612D*

K4F641612D

RAS

UCAS

LCAS

128ms

Vcc

Control

Vss

Clocks

VBB Generator

* Access mode & RAS only refresh mode

: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)

CAS -before-RAS & Hidden refresh mode

Lower

Data in

Buffer

DQ0

DQ7

Row Decoder

Refresh Timer

Refresh Control

Lower

Data out

Buffer

: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)

Memory Array

4,194,304 x 16

Cells

Refresh Counter

Row Address Buffer

Col. Address Buffer

Upper

Data in

Buffer

• Performance Range

DQ8

DQ15

Speed

-45

tRAC

45ns

50ns

60ns

tCAC

12ns

13ns

15ns

tRC

tPC

A0~A12

(A0~A11)*1

Upper

Data out

Buffer

80ns

90ns

110ns

31ns

35ns

40ns

A0~A8

(A0~A9)*1

Column Decoder

-50

-60

Note) *1 : 4K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...35

中文翻译

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与K4F661612D-TI相关器件

型号	品牌	获取价格	描述	数据表
K4F661612D-TI45	SAMSUNG	获取价格	Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
K4F661612D-TI45T	SAMSUNG	获取价格	Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50,
K4F661612D-TI500	SAMSUNG	获取价格	Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50,
K4F661612D-TI50T	SAMSUNG	获取价格	Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50,
K4F661612D-TI60	SAMSUNG	获取价格	Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
K4F661612D-TI600	SAMSUNG	获取价格	Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50,
K4F661612D-TI60T	SAMSUNG	获取价格	Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50,
K4F661612D-TL-45T	SAMSUNG	获取价格	Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50,
K4F661612D-TL60	SAMSUNG	获取价格	Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
K4F661612D-TL600	SAMSUNG	获取价格	Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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