是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | TSOP, TSOP50,.46,32 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | Is Samacsys: | N |
最长访问时间: | 45 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-G50 | JESD-609代码: | e0 |
内存密度: | 67108864 bit | 内存集成电路类型: | FAST PAGE DRAM |
内存宽度: | 16 | 端子数量: | 50 |
字数: | 4194304 words | 字数代码: | 4000000 |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 4MX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP |
封装等效代码: | TSOP50,.46,32 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 电源: | 3.3 V |
认证状态: | Not Qualified | 刷新周期: | 8192 |
自我刷新: | NO | 最大待机电流: | 0.0005 A |
子类别: | DRAMs | 最大压摆率: | 0.13 mA |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 0.8 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4F661612E-TC50 | SAMSUNG |
获取价格 |
Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
K4F661612E-TC500 | SAMSUNG |
获取价格 |
Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, | |
K4F661612E-TC50T | SAMSUNG |
获取价格 |
Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50 | |
K4F661612E-TI45 | SAMSUNG |
获取价格 |
Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
K4F661612E-TI50 | SAMSUNG |
获取价格 |
Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
K4F661612E-TI60 | SAMSUNG |
获取价格 |
Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
K4F661612E-TL45 | SAMSUNG |
获取价格 |
Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
K4F661612E-TL50 | SAMSUNG |
获取价格 |
Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
K4F661612E-TL60 | SAMSUNG |
获取价格 |
Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
K4F661612E-TL600 | SAMSUNG |
获取价格 |
Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, |