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K4E151612D-TC60 PDF预览

K4E151612D-TC60

更新时间: 2024-11-20 15:35:59
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
35页 398K
描述
EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44

K4E151612D-TC60 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP44/50,.46,32
针数:50Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.73访问模式:FAST PAGE WITH EDO
最长访问时间:60 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
JESD-609代码:e0长度:20.95 mm
内存密度:16777216 bit内存集成电路类型:EDO DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:44
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44/50,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified刷新周期:1024
座面最大高度:1.2 mm自我刷新:NO
最大待机电流:0.0005 A子类别:DRAMs
最大压摆率:0.13 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

K4E151612D-TC60 数据手册

 浏览型号K4E151612D-TC60的Datasheet PDF文件第2页浏览型号K4E151612D-TC60的Datasheet PDF文件第3页浏览型号K4E151612D-TC60的Datasheet PDF文件第4页浏览型号K4E151612D-TC60的Datasheet PDF文件第5页浏览型号K4E151612D-TC60的Datasheet PDF文件第6页浏览型号K4E151612D-TC60的Datasheet PDF文件第7页 
K4E171611D, K4E151611D  
K4E171612D, K4E151612D  
CMOS DRAM  
1M x 16Bit CMOS Dynamic RAM with Extended Data Out  
DESCRIPTION  
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of  
memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K  
Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features  
of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-  
refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung¢ s advanced CMOS pro-  
cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer,  
personal computer and portable machines.  
FEATURES  
• Extended Data Out Mode operation  
Part Identification  
(Fast Page Mode with Extended Data Out)  
• 2 CAS Byte/Word Read/Write operation  
• CAS-before-RAS refresh capability  
- K4E171611D-J(T) (5V, 4K Ref.)  
- K4E151611D-J(T) (5V, 1K Ref.)  
- K4E171612D-J(T) (3.3V, 4K Ref.)  
- K4E151612D-J(T) (3.3V, 1K Ref.)  
• RAS-only and Hidden refresh capability  
• Self-refresh capability (L-ver only)  
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs  
• Early Write or output enable controlled write  
• JEDEC Standard pinout  
Active Power Dissipation  
Unit : mW  
5V  
3.3V  
Speed  
• Available in plastic SOJ 400mil and TSOP(II) packages  
• Single +5V±10% power supply (5V product)  
• Single +3.3V ±0.3V power supply (3.3V product)  
4K  
1K  
4K  
1K  
-45  
-50  
-60  
360  
324  
288  
540  
504  
468  
550  
495  
440  
825  
770  
715  
FUNCTIONAL BLOCK DIAGRAM  
Refresh Cycles  
Part  
NO.  
Refresh  
cycle  
Refresh period  
VCC  
RAS  
UCAS  
LCAS  
W
Vcc  
Nor-  
L-ver  
Control  
Vss  
Clocks  
VBB Generator  
Row Decoder  
K4E171611D  
5V  
4K  
1K  
64ms  
K4E171612D 3.3V  
K4E151611D 5V  
Lower  
Data in  
Buffer  
128ms  
DQ0  
to  
Refresh Timer  
16ms  
K4E151612D 3.3V  
DQ7  
Lower  
Data out  
Buffer  
Refresh Control  
Refresh Counter  
Memory Array  
1,048,576 x16  
Cells  
OE  
Upper  
Data in  
Buffer  
Performance Range  
DQ8  
to  
DQ15  
Speed  
-45  
Remark  
5V/3.3V  
5V/3.3V  
5V/3.3V  
tRAC  
45ns  
50ns  
60ns  
tCAC  
13ns  
15ns  
tRC  
tHPC  
16ns  
20ns  
A0-A11  
(A0 - A9)*1  
A0 - A7  
Row Address Buffer  
Col. Address Buffer  
Upper  
Data out  
Buffer  
69ns  
84ns  
Column Decoder  
(A0 - A9)*1  
-50  
-60  
17ns 104ns 25ns  
Note) *1 : 1K Refresh  
SAMSUNG ELECTRONICS CO., LTD. reserves the right to  
change products and specifications without notice.  

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