Datasheet > K4E160412D

K4E160412D

更新时间： 2024-11-19 22:32:35

品牌	Logo	应用领域
三星 - SAMSUNG		存储
页数	文件大小	规格书
21页	256K
描述
4M x 4Bit CMOS Dynamic RAM with Extended Data Out

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中文翻译

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数据手册

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K4E160412D 数据手册

K4E170411D, K4E160411D

K4E170412D, K4E160412D

CMOS DRAM

4M x 4Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION

This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of

memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K

Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of

this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh

operation is available in L-version. This 4Mx4 EDO DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high

band-width, low power consumption and high reliability. It may be used as main memory unit for high level computer, microcomputer and

personal computer.

FEATURES

• Part Identification

• Extended Data Out Mode operation

(Fast Page Mode with Extended Data Out)

• CAS-before-RAS refresh capability

- K4E170411D-B(F) (5V, 4K Ref.)

• RAS-only and Hidden refresh capability

- K4E160411D-B(F) (5V, 2K Ref.)

• Self-refresh capability (L-ver only)

- K4E170412D-B(F) (3.3V, 4K Ref.)

- K4E160412D-B(F) (3.3V, 2K Ref.)

• Fast parallel test mode capability

• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• ActivePowerDissipation

Unit : mW

• Available in Plastic SOJ and TSOP(II) packages

• Single +5V±10% power supply (5V product)

• Single +3.3V±0.3V power supply (3.3V product)

3.3V

Speed

324

288

-50

-60

396

360

495

440

605

550

FUNCTIONAL BLOCK DIAGRAM

• Refresh Cycles

Part

Refresh Refresh period

RAS

CAS

Vcc

Vss

VCC

Control

Clocks

NO.

cycle

Normal L-ver

VBB Generator

K4E170411D

64ms

128ms

32ms

Data in

K4E170412D 3.3V

K4E160411D 5V

Buffer

Row Decoder

Refresh Timer

Refresh Control

Refresh Counter

K4E160412D 3.3V

DQ0

DQ3

Memory Array

4,194,304 x4

Cells

• Performance Range

A0-A11

(A0 - A10)*1

A0 - A9

Row Address Buffer

Col. Address Buffer

Speed

-50

Remark

20ns 5V/3.3V

tRAC

50ns

60ns

tCAC

15ns

tRC

tHPC

Data out

Buffer

Column Decoder

(A0 - A10)*1

84ns

-60

17ns 104ns 25ns 5V/3.3V

Note) *1 : 2K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...21

中文翻译

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与K4E160412D相关器件

型号	品牌	获取价格	描述	数据表
K4E160412D-B5000	SAMSUNG	获取价格	EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, SOJ-26/24
K4E160412D-B6000	SAMSUNG	获取价格	EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, SOJ-26/24
K4E160412D-BL50	SAMSUNG	获取价格	EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
K4E160412D-BL60	SAMSUNG	获取价格	EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
K4E160412D-F	SAMSUNG	获取价格	DRAM
K4E160412D-F6000	SAMSUNG	获取价格	EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, TSOP2-26/24
K4E160412D-FL60	SAMSUNG	获取价格	EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24
K4E160811D	SAMSUNG	获取价格	2M x 8Bit CMOS Dynamic RAM with Extended Data Out
K4E160811D-B	SAMSUNG	获取价格	DRAM
K4E160811D-BC50	SAMSUNG	获取价格	EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28

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