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JTX1N6461US.TR

更新时间: 2024-11-14 20:05:59
品牌 Logo 应用领域
商升特 - SEMTECH 二极管
页数 文件大小 规格书
4页 127K
描述
Trans Voltage Suppressor Diode,

JTX1N6461US.TR 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.79二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
Base Number Matches:1

JTX1N6461US.TR 数据手册

 浏览型号JTX1N6461US.TR的Datasheet PDF文件第2页浏览型号JTX1N6461US.TR的Datasheet PDF文件第3页浏览型号JTX1N6461US.TR的Datasheet PDF文件第4页 
1N6461US THRU 1N6468US  
QPL 500 Watt Surface Mount TVS  
POWER DISCRETES  
Features  
Description  
The 1N64xx series of transient voltage suppressors are  
designed to protect military and commercial electronic  
equipment from overvoltages caused by lightning, ESD,  
EFT, inductive load switching, and EMP. These devices  
are constructed using a p-n junction TVS diode in a  
hermetically sealed, voidless glass package. The  
hermetically sealed package provides high reliability in  
harsh environmental conditions. TVS diodes are further  
characterized by their high surge capability, low operating  
and clamping voltages, and a theoretically instantaneous  
response time. This makes them ideal for use as board  
‹ 500 Watts peak pulse power (tp = 10/1000µs)  
‹ Voidless hermetically sealed glass package  
‹ Metallurgically bonded  
‹ High surge capacity  
‹ Unidirectional  
‹ Available in JTX, and JTXV versions per  
MIL-S-19500/551  
Applications  
‹ Aerospace and industrial electronics  
level protection for sensitive semiconductor components. ‹ Board level protection  
These devices are DESC QPL qualified to MIL-S-19500/  
551.  
‹ Airborne systems  
‹ Shipboard systems  
‹ Ground systems  
Mechanical Characteristics  
‹ Hermetically sealed glass package  
Absolute Maximum Ratings  
Rating  
Symbol  
Value  
Units  
Peak Pulse Power (tp = 10 x 1000µs)  
Storage Temperature Range  
Ppk  
TSTG  
PD  
500  
-65 to +175  
3
Watts  
°C  
Steady-State Power Dissipation @ TL = 75°C (3/8")  
Watts  
Revision: August 8, 2007  
1
www.semtech.com  

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